CSR 5406-0

Brief

Photolithography is a key component in the fabrication of integrated circuits (IC). Ever since the realization of the first IC at Fairchild in 1961, photolithography has been the most critical technology for IC’s continued miniaturization, whose trend follows the so-called Moore’s Law. Six decades later, nanolithography still holds the key in most advanced IC manufacturing, using the latest technology called extreme-ultraviolet lithography (EUVL). In this course, we plan to study EUV lithography systematically by exploring its physics and optics. Upon successful completion of the course, the student will acquire the underlying physical principles of this technology; he/she will be prepared to enter the semiconductor workforce to perform R&D on EUV lithography as well as for further studies of specialized topics in EUV lithography at the PhD level.

Description

Course keywords: Extreme-Ultraviolet (EUV) Lithography, EUV Exposure Systems, EUV Masks, Image Analysis, Resolution Enhancement 一、指定用書(Text Books) Extreme Ultraviolet Lithography, Harry J. Levinson, SPIE Press,2020 二、參考書籍(References) Extreme Ultraviolet Lithography, Hiroo Kinoshita, Lambert Academic Publishing, 2016 X-Rays and Extreme Ultraviolet Radiation, 2nd edition, David Attwood and Anne Sakdinawat, CUP, 2016 Optical Physics for Nanolithography, Anthony Yen and Shinn-Sheng Yu, SPEI Press, 2018 Fourier Optics, 4th edition, Joseph W. Goodman, W. H. Freeman and Company, 2017 Principles of Optics, 7th edition, Max Born and Emil Wolf, Cambridge University Press, 1999 三、教學方式(Teaching Method) 線上同步遠距教學，課程講授、師生互動討論。 Online synchronous teaching, course lecture, teacher-student interaction 四、教學進度(Syllabus) 中文/English 第1週 極紫外光微影技術概述 第2週 向量分析及傅立葉分析 第3週 電磁場及馬克斯威爾方程式 第4週 波動方程式解答及電磁波 第5週 電磁輻射及各種極紫外光光源 第6週 極紫外光波長下之折射率，極紫外光之多層膜反射器 第7週 幾何光學，正弦條件，光學像差 第8週 光學繞射，影像生成，解析度極限 第9週 期中考 第10週 極紫外光曝光系統，討論及指定小組研討題目 第11週 光學元件像差及如何最小化 第12週 極紫外光光罩，光罩三維效應及改善 第13週 金屬氧化物極紫外光光阻 第14週 光學影像計算，光源光照最佳化 第15週 極紫外光之解析度增進技術 第16週 次世代之極紫外光曝光系統 第17週 研究小組報告 第18週 期末考 Week 1 EUV Lithography - An Overview Week 2 Vector Analysis and Fourier Analysis Week 3 Electromagnetic Fields and Maxwell's Equations Week 4 Solution to the Wave Equation; Electromagnetic Waves Week 5 Electromagnetic Radiation and Various EUV Light Sources Week 6 Refractive Indices at EUV Wavelength; Multilayer Reflectors for EUV Light Week 7 Geometrical Optics; the Sine Condition; First Look at Optical Aberrations Week 8 Optical Diffraction and Image Formation; Resolution Limits Week 9 Midterm Week 10 EUV Exposure Systems; Discussion/Assignment of Term Projects Week 11 Aberrations in Imaging Optics and Their Minimization Week 12 EUV Photomasks; Mask 3D Effect and Its Mitigation Week 13 EUV Photoresists; metal-Oxide EUV Resists Week 14 Computation of Aerial Images; Source-Mask Optimization Week 15 Resolution Enhancing Techniques in EUV Lithography Week 16 Next-Generation EUV Exposure Systems Week 17 Presentation of Term Projects Week 18 Final

Timetable

Scores

Average GPA 3.47

Std. Deviation 1.27

Remarks

同步遠距

Restrictions

Compulsory

Elective

Cross Discipline

First Specialization

Second Specialization